Revista ELECTRO
Vol. 47 – Año 2025
Artículo
TÍTULO
Parámetros de Spice Level 2 para Simulación de Transistores TFTS de IGZO
AUTORES
Flores-Figueroa, J.I.; Torres-Melchor, W.O.; Molinar-Solís, J.E.; Jalomo-Cuevas, J.; Hernández-Como, N.; Ocampo-Hidalgo, J.J.
RESUMEN
En este trabajo, se presenta el desarrollo de un modelo aproximado para SPICE de transistores de película delgada (TFTs ) de IGZO. Basándonos en mediciones experimentales de TFTs desarrollados por el Centro de Nanociencias del IPN, el modelo propuesto se ajusta aproximadamente a las curvas de transconductancia y las curvas de característica de salida de dichos transistores considerando efectos físicos y parámetros eléctricos. Además, el modelo fue validado mediante la simulación de un circuito inversor push-pull compuesto por transistores complementarios con dimensiones W=20 µm y L=10 µm para el canal N ; y un W=80 µm y L=5µm para el canal P. Los resultados muestran una correlación muy aceptable con el comportamiento real del circuito. Este modelo de SPICE proporciona una herramienta confiable para el diseño y análisis de circuitos basados en TFTs de IGZO facilitando la implement ación de estos dispositivos electrónicos.
Palabras Clave: TFT, IGZO, Spice, simulación eléctrica.
ABSTRACT
In this work, the development of an approximate SPICE model for IGZO thin-film transistors (TFTs) is presented. Based on experimental measurements of TFTs developed by the IPN Nanoscience Center, the proposed model closely fits the transconductance curve and the output characteristic of these transistors, considering some physical effects and electrical parameters. Additionally, the model was validat ed through the simulation of a push-pull inverter circuit composed of complementar y transistor s with dimensions W=20 µm and L=10 µm for N channel and W=80 µm and L=5 µm for P channel. Simulations show a high correlation with real circuit behavior, therefore, this SPICE model provides a reliable tool for the design and analysis of IGZO TFT-based circuits facilitating the implementation of these electronic devices.
Keywords: TFT, IGZO, Spice, el ectrica l simulations.
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CITAR COMO:
Flores-Figueroa, J.I.; Torres-Melchor, W.O.; Molinar-Solís, J.E.; Jalomo-Cuevas, J.; Hernández-Como, N.; Ocampo-Hidalgo, J.J., "Parámetros de Spice Level 2 para Simulación de Transistores TFTS de IGZO", Revista ELECTRO, Vol. 47, 2025, pp. 113-118.
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